
Power IGBT module AnM300HBE17M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Silicon IGBT module AnM300HBE17M
Specifications
Housing type
MPK-62-3
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
300 A
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Power Module MTKI-2000-25 for Industrial Applications
View Details
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829B
View Details
Powerful NPN Amplifying Transistors Special Purpose 2T908A-2
View Details
N-channel MOSFET Transistor AnU12N10L
View Details
AnDM150CD12M Power Module for Enhanced Performance
View Details
High Voltage Bipolar Power Transistors 2T8144BM1
View Details
Non-Hermetic Transistors and Diodes AnR30IGB065D
View Details
Powerful Linear LDMOS Transistor KP9171A
View Details
Silicon N-P-N Switching Transistor KT908A
View Details
Specialized Thyristor Optocouplers 3OU186A
View Details
High-Power Special Purpose Field Effect Transistors 2P7152A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions