Available for Import
Powerful GaN-based Microwave Transistor PP9170A for Amplifier Applications
Manufacturer:
NIIET OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Powerful microwave transistor on the basis of gallium nitride for application in amplifying stages, L-, S- frequency ranges. Due to small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.
Specifications
Transistor weight
5 year
Maximum voltage
150 V
Frequency of operation
2
Output power
200 W
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN-based Microwave Transistor PP9170G
View Details
Powerful N-Channel DMOP Transistors 2P7246A91
View Details
High-Power NPN Switching Transistor 2T867A for Special Applications
View Details
High Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9
View Details
Low-Noise GaAs Planar Field Transistor AП379A9
View Details
Powerful NPN Amplifying Transistors Special Purpose 2T908A-2
View Details
N-Channel MOSFET Transistor AnB12N20
View Details
High Voltage Bipolar Power Transistor 2T8143U
View Details
Power Module MTKI-2000-25 for Industrial Applications
View Details
High-Power IGBT Module AnM150HBEВ12M
View Details
N-channel MOSFET Transistor AnU12N10L
View Details
Powerful NPN Switching Transistors for Special Applications 2T856G
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions