Available for Import
Transistor 2T3130D9/PK
Manufacturer:
ARSENAL KRZPP OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n transistors 2T3130D9/PK are made in miniature plastic case KT-46 and are intended for operation in amplifiers, generators, voltage stabilisers, special-purpose equipment.
Specifications
Boundary voltage
20 V
Static current transfer coefficient
200...500
Collector junction capacitance
B1/B8 2100/900 MHz
Noise figure
4
Current transfer coefficient modulus at high frequency
2
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
DMOП P-Channel Transistor AnP53P03
View DetailsSilicon Epitaxial-Planar Microwave Transistor KT6131A
View DetailsHigh-Power High-Voltage Field Transistor KP829B9
View DetailsBipolar Transistor 1NT251 for Switching Devices I93.456.000TU
View DetailsHigh-Voltage NPN Silicon Switching Transistor KT8155G
View DetailsHigh-Power NPN Transistors for Special Applications 2T968A-5
View DetailsHigh-Power DMOS Transistors 2P7246A-5
View DetailsHigh Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View DetailsPowerful GaN-based Microwave Transistor PP9170G
View DetailsPowerful NPN Switching Transistor 2T808A-2 for Special Applications
View DetailsHigh-Power IGBT Module AnM150HBEВ12M
View DetailsHigh Voltage Bipolar Power Transistor 2T8144VM1
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions