
High-Power IGBT Module AnM150HBEВ12M for Energy Management Applications
Manufacturer:ANGSTREM OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM150HBEB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
150 A
Recovery time
200
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Silicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View Details
N-Channel MOSFET Transistor AnD1N70
View Details
Power Module AnM100HBA12M - High Efficiency Performance
View Details
DMOП P-Channel Transistor AnP53P03
View Details
Bipolar Transistor 1NT251 for Switching Devices I93.456.000TU
View Details
N-Channel MOSFET Transistor AnS140N06
View Details
Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View Details
Powerful Linear LDMOS Transistor KP9171A
View Details
Power Module AnM200SSP25M for Industrial Applications
View Details
Special Purpose Thyristor Optocouplers 3OU186B
View Details
High-Power NPN Switching Transistor 2T867A for Special Applications
View Details
LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions