
High-power NPN special-purpose switching transistors
Manufacturer:
NPP Iskra OJSC
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Available Models
High-Power NPN Switching Transistor 2T867A for Special Applications
High-voltage bipolar high-current transistors 2T8144AM
High-power NPN special-purpose switching transistors 2T878A
Powerful NPN switching transistors of special purpose 2T856A
Powerful NPN switch transistors of special purpose 2T856B
Description
Silicon planar-epitaxial n-p-n high-power switching high-voltage transistors in a metal-glass case designed for use in switching circuits, pulse modulators, secondary power supplies and other special-purpose equipment
Specifications
Collector reverse current
0.003 A
Emitter reverse current
0.04 A
Static current transfer coefficient in the common emitter circuit
12-50
Boundary voltage
300 V
Collector-emitter saturation voltage
1.5 V
Base-emitter saturation voltage
2 V
Decline time
0.3
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