
Power IGBT module AnM100HBA12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM100HBA12M
Specifications
Housing type
mpk-34
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
100 A
Recovery time
200
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

High-Power High-Voltage Field Transistor KP829A
View Details
LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View Details
High Voltage Bipolar Power Transistor 2T8143U
View Details
High Voltage Bipolar Power Transistors 2T8144BM1
View Details
High-Power Special Purpose Field Effect Transistors 2P7152A
View Details
Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View Details
High Voltage N-P-N Switching Transistor KT8144A
View Details
Specialized Thyristor Optocouplers 3OU186A
View Details
N-Channel MOSFET Transistor AnD1N70
View Details
AnDM150CD12M Power Module for Enhanced Performance
View Details
High Voltage Field Transistor KP829A9
View Details
Continuous Mode DMOS RF Transistor P - 2P979B, 230MHz
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions