Available for Import
Power IGBT module AnM100HBA17M from Russia
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM100HBA17M
Specifications
Housing type
mpk-34
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
100 A
Recovery time
180
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN-Based Microwave Transistor PP9170V
View DetailsHigh-Frequency Pulse Transistor 2T606A for Specialized Applications
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View DetailsPower Module AnDM200EA12M - Efficient Energy Control
View DetailsHigh-Frequency p-n-p Transistor 2T3108A/PK
View DetailsPowerful Linear LDMOS Transistor KP9171A
View DetailsPowerful High-Voltage N-P-N Switching Transistor KT8143F
View DetailsHigh-Frequency Field Transistors for Special Applications 2P301B/IU
View DetailsSpecial Purpose Transistor Optocoupler 3OT127A
View DetailsPower IGBT Module AnM75LCA12M
View DetailsSilicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK
View DetailsSilicon Epitaxial-Planar Microwave Transistor KT6131A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions