
Power IGBT module AnM100HBA17M from Russia
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM100HBA17M
Specifications
Housing type
mpk-34
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
100 A
Recovery time
180
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Powerful GaN Microwave Transistor for Amplification PP9137A
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A
View Details
High Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View Details
High-Power DMOS Transistors 2P7242A-4
View Details
Silicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View Details
Powerful NPN Switching Transistor 2T808A-2 for Special Applications
View Details
Power IGBT Module AnM450HBE065M for Efficient Switching
View Details
Power Module AnS150FRD065 for Industrial Applications
View Details
Compact N-Channel Field Transistor 2P526A9
View Details
AnDM150CD12M Power Module for Enhanced Performance
View Details
Special Purpose Transistor Optocoupler 3OT123B9 OSH
View Details
Powerful Linear LDMOS Transistor KP9171BS
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions