
Insulated gate bipolar transistor IGB AnR15IGB12D
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Isolated gate bipolar transistor (IGBT) AnR15IGB12D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
15 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Powerful N-Channel DMOP Transistors 2P7246A91
View Details
Transistor Optocoupler AOT110B with Local Gold-Plated Pins
View Details
Power Module AnS150FRD065 for Industrial Applications
View Details
Powerful Linear LDMOS Transistor KP9171A
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A
View Details
Power IGBT Module AnM450HBE065M for Efficient Switching
View Details
Compact N-Channel Field Transistor 2P526A9
View Details
Wave Running Light "Lotoshnik
View Details
Field-effect P-Channel Transistor 2P527A9
View Details
High-Power DMOS Transistors 2P7242A-4
View Details
High Voltage Bipolar Power Transistors 2T8144BM1
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions