Available for Import
Power IGBT module AnM200RCB17M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM200RCB17M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
200 A
Recovery time
200
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Transistor Optocoupler Special Purpose 3OT123A9 OSM
View DetailsPowerful GaN-based Microwave Transistor PP9170A
View DetailsField-effect P-Channel Transistor 2P527A9
View DetailsHigh-Frequency Field Transistors for Special Applications 2P301B/IU
View DetailsHigh-Power High-Voltage Field Transistor KP829A
View DetailsPowerful Linear LDMOS Transistor KP9171BS
View DetailsPowerful Silicon High Voltage N-Channel DMOS Transistors and Modules 2P829G
View DetailsPowerful IGBT Module AnM450HBE12M for Efficient Energy Control
View DetailsN-channel MOSFET Transistor AnU12N10L
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829B
View DetailsP-N-P Silicon Transistor KT234V9
View DetailsPowerful High-Voltage Field Transistor KP829B
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions