Available for Import
Power IGBT module AnM300HBB12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM300HBB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
300 A
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View DetailsHigh-Voltage NPN Silicon Switching Transistor KT8155G
View DetailsHigh-Power High-Voltage Field Transistor KP829D
View DetailsPowerful GaN-based Microwave Transistor PP9139B1
View DetailsHigh-Voltage Bipolar Power Transistors 2T8143F1
View DetailsPowerful GaN Microwave Transistor for Amplification PP9137A
View DetailsHigh-Power GaN Microwave Transistor PP9138B
View DetailsPowerful Linear LDMOS Transistor KP9171BS
View DetailsSpecial Purpose Transistor Optocoupler 3OT123B9 OSH
View DetailsSilicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View DetailsSpecial Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829B
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions